CAS 69507-98-8 | Methylammonium triiodoplumbate >99%

MTIP has high electron mobility, making it a good candidate for future electronic device applications. Furthermore, MTIP has good transport properties and chemical interactions in non-polar solvents such as chloroform, dichloromethane, and acetonitrile. The phase transition temperature is also relatively low, about 70°C, and the crystal structure is still stable below 400°C. The optical properties of MTIP depend on the orientation of the crystallographic planes relative to incident light.

Heterogeneous semiconductor nanowire array for sensitive broadband photodetector by crack photolithography-based micro-/nanofluidic platforms

Introduction Semiconductor nanowires (NWs) are widely used for electronics,1 bio/chemical sensors,2 lasers,3 and photodetectors4–7 for their uniquely high surface-to-volume ratio that enables high sensitivity, rapid response time, and low power consumption.8 However, their fabrication methods typically rely on traditional micro-/nanofabrication equipment and facilities so precisely controlling the number, dimensions, orientation, alignment, and position of NWs on the same substrate9 remains a challenge. For example, chemical vapor deposition (CVD) has the general advantage of precise surface, morphology, structure, and composition control of a product, thus providing an alternative synthesis route toward high quality single-crystalline semiconductor nanowires.10,11 However it is difficult to directly use the nanowires prepared by CVD methods in the devices based on a single nanowire without manipulation and transfer. The integration of NWs into the nano-/microelectromechanical